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Power MOSFET IPD12CN10NGATMA1 DPAK (TO-252)

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    MPN IPD12CN10N G
    Other # IPD12CN10NGATMA1
    Mfr. Infineon
    Oneyac # A-IPD12CN10N G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : DPAK (TO-252) Series : OptiMOS2

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    to configure Single
    Pd power dissipation (Max) 125W
    height 2.3mm
    length 6.5mm
    Series OptiMOS2
    width 6.22mm
    Descent time 8ns
    rise time 21ns
    Typical shutdown delay time 32ns
    Typical connection delay time 17ns
    Moisture Level 1 Ohms
    Rds On(Max)@Id,Vgs 12.4mΩ
    Drain source voltage Vds 100V
    Continuous drain current Id 67A
    RthJC max 1.2 K/W
    QG (typ @10V) 49.0 nC
    Package/Enclosure DPAK (TO-252)
    Budgetary Price €/1k 0.61
    Ptot max 125.0W
    FET type N-Channel
    Mounting SMT
    Coss 489.0pF
    Ciss 3250.0 pF
    Gate voltage Vgs 3V,2V,4V
    working temperature -55°C~175°C
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