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Power MOSFET IPD068N10N3GATMA1 DPAK (TO-252)

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    MPN IPD068N10N3 G
    Other # IPD068N10N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPD068N10N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : DPAK (TO-252)

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    QG gate charge 68nC
    to configure Single
    Pd power dissipation (Max) 150W
    height 2.3mm
    length 6.5mm
    width 6.22mm
    Forward transconductance - minimum value 54S
    Descent time 9ns
    rise time 37ns
    Typical shutdown delay time 37ns
    Typical connection delay time 19ns
    Moisture Level 1 Ohms
    Rds On(Max)@Id,Vgs 6.8mΩ
    Drain source voltage Vds 100V
    Continuous drain current Id 90A
    QG (typ @10V) 51.0 nC
    Package/Enclosure DPAK (TO-252)
    Rth 1.0 K/W
    Budgetary Price €/1k 0.65
    Ptot max 150.0W
    FET type N-Channel
    Coss 646.0 pF
    Ciss 3690.0 pF
    Gate voltage Vgs 2.7V,2V,3.5V
    working temperature -55°C~175°C
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    In Stock :  0 Lead Time:22W

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    When unpacking without original label and tray!
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