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Power MOSFET IPD048N06L3GBTMA1

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    MPN IPD048N06L3 G
    Other # IPD048N06L3GBTMA1
    Mfr. Infineon
    Oneyac # A-IPD048N06L3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS™

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 90A
    Rds On(Max)@Id,Vgs 4.8mΩ
    Gate voltage Vgs 20V
    QG gate charge 50nC
    to configure Single
    Pd power dissipation (Max) 115W
    height 2.3mm
    length 6.5mm
    FET type N-Channel
    width 6.22mm
    Forward transconductance - minimum value 125S
    Descent time 12ns
    rise time 5ns
    Typical shutdown delay time 56ns
    Typical connection delay time 11ns
    working temperature -55°C~175°C
    Series OptiMOS™
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