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Power MOSFET IPD036N04LGBTMA1

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    MPN IPD036N04L G
    Other # IPD036N04LGBTMA1
    Mfr. Infineon
    Oneyac # A-IPD036N04L G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 6300pF @ 20V
    working temperature -55°C~175°C(TJ)
    Drain source voltage Vds 40V
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2V @ 45µA
    Gate charge (Qg) at different Vgs (maximum value) 78nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 90A
    Rds On(Max)@Id,Vgs 3.6mΩ
    Gate voltage Vgs 10V
    QG gate charge 59nC
    to configure Single
    Pd power dissipation (Max) 94W
    height 2.3mm
    length 6.5mm
    Series OptiMOS3
    FET type N-Channel
    width 6.22mm
    Forward transconductance - minimum value 85S
    Descent time 6ns
    rise time 5.4ns
    Typical shutdown delay time 37ns
    Typical connection delay time 9.3ns
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