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Power MOSFET IPB038N12N3GATMA1 TO-263-3

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    MPN IPB038N12N3 G
    Other # IPB038N12N3GATMA1
    Mfr. Infineon
    Oneyac # A-IPB038N12N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-263-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 120V
    Continuous drain current Id 120A
    Rds On(Max)@Id,Vgs 3.8mΩ@100A,10V
    Gate voltage Vgs 20V
    QG gate charge 211nC
    to configure Single
    Pd power dissipation (Max) 300W
    height 4.4mm
    length 10mm
    Series OptiMOS3
    FET type N-Channel
    width 9.25mm
    Forward transconductance - minimum value 83S
    Descent time 21ns
    rise time 52ns
    Typical shutdown delay time 70ns
    Typical connection delay time 35ns
    working temperature -55°C~175°C
    Package/Enclosure TO-263-3
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