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Power MOSFET BSC047N08NS3GATMA1

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    MPN BSC047N08NS3 G
    Other # BSC047N08NS3GATMA1
    Mfr. Infineon
    Oneyac # A-BSC047N08NS3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 80V
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 3.9mΩ
    Gate voltage Vgs 20V
    QG gate charge 69nC
    to configure Single
    Pd power dissipation (Max) 125W
    height 1.27mm
    length 5.9mm
    Series OptiMOS3
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 60S
    Descent time 11ns
    rise time 17ns
    Typical shutdown delay time 44ns
    Typical connection delay time 18ns
    working temperature -55°C~150°C
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