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Power MOSFET BSC042N03LSGATMA1

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    MPN BSC042N03LS G
    Other # BSC042N03LSGATMA1
    Mfr. Infineon
    Oneyac # A-BSC042N03LS G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Number of channels 1Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 93A
    Rds On(Max)@Id,Vgs 4.2mΩ
    Gate voltage Vgs 20V
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 2.5W
    height 1.27mm
    length 5.9mm
    Series OptiMOS3
    FET type N-Channel
    width 5.15mm
    Descent time 4ns
    rise time 4.4ns
    Typical shutdown delay time 24ns
    Typical connection delay time 6ns
    working temperature -55°C~150°C
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