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Power MOSFET BSC046N02KSGAUMA1

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    MPN BSC046N02KS G
    Other # BSC046N02KSGAUMA1
    Mfr. Infineon
    Oneyac # A-BSC046N02KS G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Series : OptiMOS2

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 4100pF @ 10V
    working temperature -55°C~150°C(TJ)
    Drain source voltage Vds 20V
    Drive voltage @ Rds On (Max), Rds On (Min) 2.5V,4.5V
    Vgs (th) at different IDs (maximum value) 1.2V @ 110µA
    Gate charge (Qg) at different Vgs (maximum value) 27.6nC @ 4.5V
    Number of channels 1Channel
    Continuous drain current Id 19A
    Rds On(Max)@Id,Vgs 4.6mΩ
    Gate voltage Vgs 12V
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 2.8W
    height 1.27mm
    length 5.9mm
    Series OptiMOS2
    FET type N-Channel
    width 5.15mm
    Descent time 6ns
    rise time 117ns
    Typical shutdown delay time 34ns
    Typical connection delay time 15ns
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