Power MOSFET ±20V 2W(Ta) 19mΩ@8.2A,10V -55°C~150°C(TJ) N-Channel 8.2A 30V 6-TSOP
| MPN | IRFTS8342TRPBF |
|---|---|
| Mfr. | Infineon |
| Oneyac # | A-IRFTS8342TRPBF |
| Supplier | Oneyac |
| Unleaded/RoHs |
Lead Free/Rohs
|
| Description | Single N-Channel 30 V 29 mOhm 4.8 nC 2 W Silicon Surface Mount Mosfet - SC-74 |
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| Datasheet |
|---|
Specifications FAQ
| Product Attribute | Attribute Value | Operation |
|---|---|---|
| Product Category | Power MOSFET | |
| Series | HEXFET® | |
| Drive voltage @ Rds On (Max), Rds On (Min) | 4.5V,10V | |
| Vgs (th) at different IDs (maximum value) | 2.35V @ 25µA | |
| Gate charge (Qg) at different Vgs (maximum value) | 4.8nC @ 4.5V | |
| Input capacitance (Ciss) at different Vds (maximum value) | 560pF @ 25V | |
| Gate voltage Vgs | ±20V | |
| Pd power dissipation (Max) | 2W(Ta) | |
| Rds On(Max)@Id,Vgs | 19mΩ@8.2A,10V | |
| working temperature | -55°C~150°C(TJ) | |
| FET type | N-Channel | |
| Continuous drain current Id | 8.2A | |
| Drain source voltage Vds | 30V | |
| Gate charge (Qg) at different Vgs (maximum value) | 4.8nC | |
| Voltage, coupled to gate charge (Qg) (maximum) @ Vgs | 4.5V | |
| Input capacitance (Ciss) at different Vds (maximum value) | 560pF | |
| Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds | 25V | |
| Package/Enclosure | 6-TSOP |
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In Stock : 0 Lead Time：12W
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ : Inquiry | ||
| MPQ | 3,000 | ETD HK | Contact Us |
|---|---|---|---|
| Min. | 1 | Mult. | 1 |
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