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Power MOSFET TO-220AB

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    MPN IRFB3207ZPBF
    Mfr. Infineon
    Oneyac # A-IRFB3207ZPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 170nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 6920pF @ 50V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 300W(Tc)
    Rds On(Max)@Id,Vgs 4.1mΩ@75A,10V
    working temperature -55°C~175°C(TJ)
    FET type N-Channel
    Continuous drain current Id 170A
    Drain source voltage Vds 75V
    Gate charge (Qg) at different Vgs (maximum value) 170nC
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 10V
    Input capacitance (Ciss) at different Vds (maximum value) 6920pF
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 50V
    Package/Enclosure TO-220AB
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    In Stock :  0 Lead Time:14W

    Qty. Unit Price Ext. Price
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