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Power MOSFET TO-263-3,D²Pak,TO-263AB

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MPN R6009KNJTL
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A-R6009KNJTL
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description
Package/Enclosure : TO-263-3,D²Pak,TO-263AB

Specifications FAQ

Description Details Operation
Product Category Power MOSFET
Drain source voltage Vds 600V
Continuous drain current Id 9A(Tc)
Drive voltage @ Rds On (Max), Rds On (Min) 10V
Vgs (th) at different IDs (maximum value) 5V @ 1mA
Gate charge (Qg) at different Vgs (maximum value) 16.5nC @ 10V
Gate voltage Vgs ±20V
Input capacitance (Ciss) at different Vds (maximum value) 540pF @ 25V
Pd power dissipation (Max) 94W(Tc)
Rds On(Max)@Id,Vgs 535mΩ@2.8A,10V
working temperature -55°C~150°C(TJ)
Package/Enclosure TO-263-3,D²Pak,TO-263AB
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In Stock :  0

Qty. Unit Price Ext. Price
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