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Power Mosfet IPB60R600C6ATMA1

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    MPN IPB60R600C6
    Other # IPB60R600C6ATMA1
    Mfr. Infineon
    Oneyac # A-IPB60R600C6
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Qg-gate charge 20.5nC
    Rise Time 9ns
    Vgs (th) (maximum) at different Ids 3.5V @ 200µA
    Continuous Drain Current Id 7.3A
    Typical on-delay time 12ns
    Configuration Single
    Typical off delay time 80ns
    Input capacitance (Ciss) at different Vds (maximum) 440pF @ 100V
    length 10mm
    Number of channels 1Channel
    height 4.4mm
    width 9.25mm
    Gate Charge (Qg) at Different Vgs (Maximum) 20.5nC @ 10V
    Drain-source voltage Vds 600V
    Drive voltage @Rds On (Max), Rds On (Min) 10V
    Rds On(Max)@Id,Vgs 540mΩ
    Operating temperature -55°C~150°C(TJ)
    Gate voltage Vgs 20V
    Pd-power dissipation (Max) 63W
    fet type N-Channel
    Fall time 13ns
    Series CoolMOSC6
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