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Power Mosfet HSOP-8

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    MPN RS1E170GNTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A-RS1E170GNTB
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSOP-8

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Continuous Drain Current Id 17A
    Pd-power dissipation (Max) 3W
    Qg-gate charge 12nC
    Rds On(Max)@Id,Vgs 6.7mΩ
    Drain-source voltage Vds 30V
    Gate voltage Vgs 2.5V
    Rise Time 4.8ns
    Fall time 3.7ns
    Typical off delay time 27ns
    Typical on-delay time 10ns
    Package/Enclosure HSOP-8
    fet type N-Channel
    Forward Transconductance-Minimum 13S
    Number of channels 1Channel
    Configuration Single
    Operating temperature -55°C~150°C
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