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Power MOSFET PowerPak1212-8

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    MPN SI7129DN-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI7129DN-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PowerPak1212-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.8V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 71nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3345pF @ 15V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 3.8W(Ta),52.1W(Tc)
    working temperature -50°C~150°C(TJ)
    Package/Enclosure PowerPak1212-8
    FET type P-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 35A
    Rds On(Max)@Id,Vgs 16mΩ
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    A : Oneyac self-run selected brand has the original factory authorized agent qualification, and can provide the agent certificate.Part of the product data comes from partners (such as holder, future electronics, RS electronics), and we have carried out strict qualification examination for the products, with original factory labels and relevant bills for inspection.

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