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Power MOSFET SOIC-8

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    MPN SI9407BDY-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI9407BDY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8 Series : TrenchFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 22nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 600pF @ 30V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 2.4W(Ta),5W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    FET type P-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 3.2A
    Rds On(Max)@Id,Vgs 120mΩ
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    In Stock :  30 Lead Time:13W

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    MPQ 2,500 ETD HK 5~7 Working Days
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