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Power MOSFET SOIC-8

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    MPN SI7456DDP-T1-GE3
    Mfr. Vishay
    Oneyac # A-SI7456DDP-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8 Series : TrenchFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.8V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 29.5nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 900pF @ 50V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 5W(Ta),35.7W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    FET type N-Channel
    Continuous drain current Id 27.8A
    Rds On(Max)@Id,Vgs 23mΩ
    Drain source voltage Vds 2.8V
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    In Stock :  0 Lead Time:34W

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