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Power MOSFET IPA80R900P7XKSA1 PG-TO220-3

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    MPN IPA80R900P7
    Other # IPA80R900P7XKSA1
    Mfr. Infineon
    Oneyac # A-IPA80R900P7
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : PG-TO220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series CoolMOS™ P7
    FET type N-Channel
    Drain source voltage Vds 800V
    Continuous drain current Id 6A(Tc)
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 3.5V @ 110µA
    Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
    Gate voltage Vgs ±20V
    Input Capacitance (Ciss) (Max) @ Vds 350pF @ 500V
    Pd power dissipation (Max) 26W(Tc)
    Rds On(Max)@Id,Vgs 900mΩ@2.2A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure PG-TO220-3
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    In Stock :  0 Lead Time:22W

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    MPQ 500 ETD HK Contact Us
    Min. 1 Mult. 1

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