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Power MOSFET TO-252

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    MPN SIHB33N60ET1-GE3
    Mfr. Vishay
    Oneyac # A-SIHB33N60ET1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252 Series : E

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series E
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 150nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3508pF @ 100V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-252
    Continuous drain current Id 33A
    Pd power dissipation (Max) 278W
    QG gate charge 103nC
    Rds On(Max)@Id,Vgs 98mΩ
    Drain source voltage Vds 600V
    Gate voltage Vgs 4V
    rise time 43ns
    Descent time 48ns
    Typical shutdown delay time 161ns
    Typical connection delay time 28ns
    width 9.65mm
    Number of channels 1Channel
    to configure Single
    length 10.67mm
    height 4.83mm
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    In Stock :  0 Lead Time:23W

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