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Power Mosfet TSOT-26

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    MPN DMG6601LVT-7
    Mfr. Diodes Incorporated
    Oneyac # A-DMG6601LVT-7
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    N & P-Channel 30 V 110 mO Complementary Pair Enhancement Mode Mosfet

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Vgs (th) (maximum) at different Ids 1.5V @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 12.3nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum) 422pF @ 15V
    Operating temperature -55°C~150°C(TJ)
    Package/Enclosure TSOT-26
    Continuous Drain Current Id 3.8A,2.5A
    Pd-power dissipation (Max) 1.3W
    Qg-gate charge 12.3nC,13.8nC
    Rds On(Max)@Id,Vgs 55mΩ,110mΩ
    Drain-source voltage Vds 30V
    Gate voltage Vgs 500mV,400mV
    Rise Time 7.4ns,4.6ns
    Fall time 15.6ns,2.2ns
    Typical off delay time 31.2ns,18.3ns
    Typical on-delay time 1.6ns,1.7ns
    Series DMG6601
    Number of channels 2Channel
    Configuration Dual
    fet type N-Channel
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