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Power MOSFET PQFN

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    MPN IRFH5015TRPBF
    Mfr. Infineon
    Oneyac # A-IRFH5015TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    N-Channel 150 V 3.6 W 33 nC SMT HexFet Power Mosfet - PQFN 5 x 6 mm

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 5V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 50nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2300pF @ 50V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 3.6W(Ta),156W(Tc)
    Rds On(Max)@Id,Vgs 31mΩ@34A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure PQFN
    FET type N-Channel
    Drain source voltage Vds 150V
    Continuous drain current Id 10A
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    In Stock :  0 Lead Time:12W

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    Min. 1 Mult. 1

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