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Power MOSFET SOIC-8

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    MPN SI4564DY-T1-GE3
    Mfr. Vishay
    Oneyac # A36-SI4564DY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Vgs (th) at different IDs (maximum value) 2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 31nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 855pF @ 20V
    Pd power dissipation (Max) 3.1W,3.2W
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    FET type N+P-Channel
    Continuous drain current Id 10A
    Rds On(Max)@Id,Vgs 14.5mΩ,17.5mΩ
    Drain source voltage Vds 2V,2.5V
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    In Stock :  12,433

    Qty. Unit Price Ext. Price
    9+ $0.8579 $7.7211
    100+ $0.7149 $71.49
    1,250+ $0.6495 $811.875

    Full Reel (Order in multiples of 2500)

    2,500+ $0.6024 $1,506

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 9 Mult. 1

    Special Note

    Production Date: Within 2 years

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