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Power MOSFET SOIC-8

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    MPN SI4190ADY-T1-GE3
    Mfr. Vishay
    Oneyac # A36-SI4190ADY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series SI
    height 1.75 mm
    length 4.9 mm
    width 3.9 mm
    Part number alias SI4190ADY-GE3
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.8V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 67nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1970pF @ 50V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 3W(Ta),6W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    FET type N-Channel
    Continuous drain current Id 18.4A
    Rds On(Max)@Id,Vgs 8.8mΩ
    Drain source voltage Vds 2.8V
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    In Stock :  2,538

    Qty. Unit Price Ext. Price
    7+ $1.1271 $7.8897
    100+ $0.9735 $97.35
    1,250+ $0.9263 $1,157.875

    Full Reel (Order in multiples of 2500)

    2,500+ $0.8822 $2,205.5

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 7 Mult. 1

    Special Note

    Production Date: 24+

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