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IGBT transistor TO-247

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    MPN HGTG11N120CND
    Mfr. ON Semiconductor
    Oneyac # A36-HGTG11N120CND
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-247

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category IGBT transistor
    IGBT type NPT
    Voltage emitter breakdown (maximum value) 1200V
    Current collector (Ic) (maximum value) 43A
    Pulse current collector (Icm) 80A
    Vce (on) at different Vge and Ic 2.4V @ 15V,11A
    Pd power dissipation (Max) 298W
    Switching energy 950 µ J (on), 1.3mJ (off)
    Input type standard
    Td (on/off) value at 25 ° C 23ns/180ns
    Test conditions 960V, 11A, 10 ohms, 15V
    Reverse recovery time (trr) 70ns
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-247
    IGBT type NPT
    Voltage emitter breakdown (maximum value) 1200V
    Current collector (Ic) (maximum value) 43A
    Pulse current collector (Icm) 80A
    Vce (on) at different Vge and Ic 2.4V @ 15V,11A
    Power Rating 298W
    Td (on/off) value at 25 ° C 23ns/180ns
    working temperature -55°C ~ 150°C(TJ)
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    In Stock :  25

    Qty. Unit Price Ext. Price
    3+ $2.5082 $7.5246
    10+ $2.1599 $21.599

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    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 450 ETD HK 1~2 Weeks
    Min. 3 Mult. 1

    Special Note

    Production Date: 22+

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