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Universal MOSFET TO-236-3,SC-59,SOT-23-3 SuperSOT

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    MPN FDN357N
    Mfr. ON Semiconductor
    Oneyac # A36-FDN357N
    Supplier Oneyac
    Unleaded/RoHs Lead Free/Rohs
    Description
    Package/Enclosure : TO-236-3,SC-59,SOT-23-3 Package/Enclosure : SuperSOT

    Documents

    Datasheet

    No Datasheet

    Specifications FAQ

    Description Details Operation
    Product Category Universal MOSFET
    Continuous drain current Id 1.9A(Ta)
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 5.9nC @ 5V
    Input capacitance (Ciss) at different Vds (maximum value) 235pF @ 10V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 500mW(Ta)
    Rds On(Max)@Id,Vgs 60m Ohms@2.2A,10V
    working temperature -55°C~150°C(TJ)
    Package/Enclosure TO-236-3,SC-59,SOT-23-3
    Package/Enclosure SuperSOT
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 1.9A
    Vgs (th) at different IDs (maximum value) 2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 5.9nC @ 5V
    Input capacitance (Ciss) at different Vds (maximum value) 235pF @ 10V
    Power Rating 500mW(Ta)
    Rds On(Max)@Id,Vgs 60 milliohms @ 2.2A, 10V
    working temperature -55°C ~ 150°C(TJ)
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    In Stock :  2,832

    Qty. Unit Price Ext. Price
    40+ $0.2191 $8.764
    100+ $0.1689 $16.89
    750+ $0.1404 $105.3
    1,500+ $0.1278 $191.7

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 40 Mult. 1

    Special Note

    Production Date: 24+

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