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Power MOSFETs 150°C(TJ) HSMT 12A 2W 8mΩ@-12A,-10V 39V ±20V P-Channel

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MPN RQ3E120ATTB
Mfr. ROHM Semiconductor
Authorized Distributor
Oneyac # A36-RQ3E120ATTB
Supplier Oneyac
Product Cycle

Production

Unleaded/RoHs Lead Free/Rohs
Description 150°C(TJ) HSMT 12A 2W 8mΩ@-12A,-10V 39V ±20V P-Channel

Specifications FAQ

Product Attribute Attribute Value Operation
Product Category Power MOSFETs
Series RQ
Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum value) 62nC @ 10V
Input capacitance (Ciss) at different Vds (maximum value) 3200pF @ 15V
working temperature 150°C(TJ)
Package/Enclosure HSMT
Continuous drain current Id 12A
Pd power dissipation (Max) 2W
QG gate charge 62nC
Rds On(Max)@Id,Vgs 8mΩ@-12A,-10V
Drain source voltage Vds 39V
Gate voltage Vgs ±20V
rise time 30ns
Descent time 95ns
Typical shutdown delay time 140ns
Typical connection delay time 20ns
width 2.4mm
FET type P-Channel
Number of channels 1Channel
to configure Single
length 3mm
height 0.85mm
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In Stock :  11,648

Qty. Unit Price Ext. Price
30+ $0.2281 $6.843
100+ $0.1822 $18.22
750+ $0.1641 $123.075
1,500+ $0.1544 $231.6

Full Reel (Order in multiples of 3000)

3,000+ $0.1461 $438.3

Unit Price:$

Ext. Price:$

When unpacking without original label and tray!
MPQ 3,000 ETD HK 1~2 Weeks
Min. 30 Mult. 1

Special Note

Production Date: 25+

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