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Power MOSFET SOIC-8

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    MPN SI9407BDY-T1-GE3
    Mfr. Vishay
    Oneyac # A36-SI9407BDY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 3V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 22nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 600pF @ 30V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 2.4W(Ta),5W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    FET type P-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 3.2A
    Rds On(Max)@Id,Vgs 120mΩ
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    In Stock :  19,667

    Qty. Unit Price Ext. Price
    30+ $0.2328 $6.984
    100+ $0.1795 $17.95
    1,250+ $0.1552 $194

    Full Reel (Order in multiples of 2500)

    2,500+ $0.1462 $365.5

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Date: 23+

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