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Power MOSFET BSP296N H6327 TO-261-4,TO-261AA

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    MPN BSP296NH6327XTSA1
    Other # BSP296N H6327
    Mfr. Infineon
    Oneyac # A3a-BSP296NH6327XTSA1-2
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-261-4,TO-261AA

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 1.2A(Ta)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 600 milliohms @ 1.2A, 10V
    Vgs (th) (maximum value) for different IDs 1.8V @ 100uA
    Input capacitance (Ciss) at different Vds (maximum value) 152.7pF @ 25V
    Gate charge (Qg) at different Vgs (maximum value) 6.7nC @ 10V
    Power dissipation (maximum value) 1.8W(Ta)
    Package/Enclosure TO-261-4,TO-261AA
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 100V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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    In Stock :  850

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 10)

    10+ $0.9005 $9.005
    100+ $0.613 $61.3
    500+ $0.5126 $256.3

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 10 ETD HK 1~2 Weeks
    Min. 10 Mult. 1

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