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Power MOSFET BSS316N H6327 TO-236-3,SC-59,SOT-23-3

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    MPN BSS316NH6327XTSA1
    Other # BSS316N H6327
    Mfr. Infineon
    Oneyac # A3a-BSS316NH6327XTSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-236-3,SC-59,SOT-23-3

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    Datasheet

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 1.4A(Ta)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 160 milliohms @ 1.4A, 10V
    Vgs (th) (maximum value) for different IDs 2V @ 3.7uA
    Input capacitance (Ciss) at different Vds (maximum value) 94pF @ 15V
    Gate charge (Qg) at different Vgs (maximum value) 0.6nC @ 5V
    Power dissipation (maximum value) 500mW(Ta)
    Package/Enclosure TO-236-3,SC-59,SOT-23-3
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 30V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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    In Stock :  987,000

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 3000)
    3,000+ $0.072 $216
    6,000+ $0.0612 $367.2
    9,000+ $0.0594 $534.6
    12,000+ $0.0504 $604.8
    15,000+ $0.0486 $729
    21,000+ $0.0468 $982.8
    24,000+ $0.0468 $1,123.2
    51,000+ $0.045 $2,295
    102,000+ $0.045 $4,590

    Unit Price：$

    Ext. Price：$
    When unpacking without original label and tray！
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 3,000 Mult. 1

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