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Power MOSFET TO-220AB

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    MPN IRFB3806PBF
    Mfr. Infineon
    Oneyac # A3a-IRFB3806PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 30nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 1150pF @ 50V
    Pd power dissipation (Max) 71W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 50µA
    Gate charge (Qg) at different Vgs (maximum value) 30nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1150pF @ 50V
    Rds On(Max)@Id,Vgs 15.8mΩ@25A,10V
    FET type N-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 43A
    Package/Enclosure TO-220AB
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    In Stock :  22,748

    Qty. Unit Price Ext. Price
    9+ $0.8549 $7.6941
    10+ $0.7088 $7.088
    25+ $0.651 $16.275
    50+ $0.3027 $15.135

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 9 Mult. 1

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