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Power MOSFET 8-SO

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    MPN IRF8910TRPBF
    Mfr. Infineon
    Oneyac # A3a-IRF8910TRPBF-0
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Dual N-Channel 20 V 2 W 7.4 nC Hexfet Power Mosfet Surface Mount - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.55V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 11nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 960pF @ 10V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Rds On(Max)@Id,Vgs 13.4mΩ@10A,10V
    Vgs (th) at different IDs (maximum value) 2.55V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 11nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 960pF @ 10V
    Pd power dissipation (Max) 2W
    FET type N-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 10A
    Package/Enclosure 8-SO
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    In Stock :  3,495

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 1)

    20+ $0.5689 $11.378
    25+ $0.5674 $14.185
    100+ $0.502 $50.2
    250+ $0.5005 $125.125
    500+ $0.4457 $222.85
    1,000+ $0.3879 $387.9

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1 ETD HK 1~2 Weeks
    Min. 20 Mult. 10

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