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Power MOSFET D2PAK

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    MPN IRFS3206TRRPBF
    Mfr. Infineon
    Oneyac # A3a-IRFS3206TRRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Single N-Channel 60 V 300 W 120 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 170nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 6540pF @ 50V
    Pd power dissipation (Max) 300W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 150µA
    Gate charge (Qg) at different Vgs (maximum value) 170nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 6540pF @ 50V
    Rds On(Max)@Id,Vgs 3mΩ@75A,10V
    FET type N-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 210A
    Package/Enclosure D2PAK
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    In Stock :  800

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 800)

    800+ $1.6625 $1,330

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 800 ETD HK 1~2 Weeks
    Min. 800 Mult. 800

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