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Power MOSFET 

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    MPN AUIRFR5305TRL
    Mfr. Infineon
    Oneyac # A3a-AUIRFR5305TRL
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Drain source voltage Vds 55V
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 63nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 1200pF @ 25V
    working temperature -55°C~175°C(TJ)
    Number of channels 1Channel
    Continuous drain current Id 31A
    Rds On(Max)@Id,Vgs 65mΩ
    Gate voltage Vgs 20V
    QG gate charge 63nC
    to configure SingleQuintSource
    Pd power dissipation (Max) 110W
    height 2.3mm
    length 6.5mm
    FET type P-Channel
    width 6.22mm
    Forward transconductance - minimum value 8S
    Descent time 63ns
    rise time 66ns
    Typical shutdown delay time 39ns
    Typical connection delay time 14ns
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    In Stock :  3,773

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 5 Mult. 1

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