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Power MOSFET IPB042N10N3 G TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    MPN IPB042N10N3GATMA1
    Other # IPB042N10N3 G
    Mfr. Infineon
    Oneyac # A3a-IPB042N10N3GATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    N-Channel 100 V 4.2 mOhm OptiMOS™3 Power-Transistor - PG-TO-263-3

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    Datasheet

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 100A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 4.2 milliohms @ 50A, 10V
    Vgs (th) (maximum value) for different IDs 3.5V @ 150uA
    Input capacitance (Ciss) at different Vds (maximum value) 8410pF @ 50V
    Gate charge (Qg) at different Vgs (maximum value) 117nC @ 10V
    Power dissipation (maximum value) 214W(Tc)
    Package/Enclosure TO-263-3, D ² Pak (2 leads+tab), TO-263AB
    working temperature -55°C ~ 175°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 100V
    Drive voltage (maximum RdsOn, minimum RdsOn) 6V,10V
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    In Stock :  84

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 1)
    4+ $2.0626 $8.2504
    10+ $1.7872 $17.872
    25+ $1.5758 $39.395

    Unit Price：$

    Ext. Price：$
    When unpacking without original label and tray！
    MPQ 1 ETD HK 1~2 Weeks
    Min. 4 Mult. 1

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