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Power MOSFET BSC018N04LS G 8-PowerTDFN

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    MPN BSC018N04LSGATMA1
    Other # BSC018N04LS G
    Mfr. Infineon
    Oneyac # A3a-BSC018N04LSGATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : 8-PowerTDFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 30A(Ta),100A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 1.8 milliohms @ 50A, 10V
    Vgs (th) (maximum value) for different IDs 2V @ 85uA
    Input capacitance (Ciss) at different Vds (maximum value) 12000pF @ 20V
    Gate charge (Qg) at different Vgs (maximum value) 150nC @ 10V
    Power dissipation (maximum value) 2.5W(Ta),125W(Tc)
    Package/Enclosure 8-PowerTDFN
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 40V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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    In Stock :  1,800

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 1)

    6+ $1.1606 $6.9636
    10+ $0.9203 $9.203
    25+ $0.9142 $22.855
    100+ $0.7636 $76.36
    250+ $0.7575 $189.375
    500+ $0.7286 $364.3

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1 ETD HK 1~2 Weeks
    Min. 6 Mult. 1

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