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Power MOSFET IPB80N08S2L-07 TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    MPN IPB80N08S2L07ATMA1
    Other # IPB80N08S2L-07
    Mfr. Infineon
    Oneyac # A3a-IPB80N08S2L07ATMA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-263-3, D ² Pak (2 leads+tab), TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 80A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 6.8 milliohms @ 80A, 10V
    Vgs (th) (maximum value) for different IDs 2V @ 250uA
    Input capacitance (Ciss) at different Vds (maximum value) 5400pF @ 25V
    Gate charge (Qg) at different Vgs (maximum value) 233nC @ 10V
    Power dissipation (maximum value) 300W(Tc)
    Package/Enclosure TO-263-3, D ² Pak (2 leads+tab), TO-263AB
    working temperature -55°C ~ 175°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 75V
    Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
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    In Stock :  5,000

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 1000)

    1,000+ $2.5949 $2,594.9
    3,000+ $2.5432 $7,629.6
    5,000+ $2.4747 $12,373.5

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 1,000 Mult. 1

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