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Power MOSFET SPP11N80C3 TO-220-3

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    MPN SPP11N80C3XKSA1
    Other # SPP11N80C3
    Mfr. Infineon
    Oneyac # A3a-SPP11N80C3XKSA1
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-220-3

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 11A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 450 milliohms @ 7.1A, 10V
    Vgs (th) (maximum value) for different IDs 3.9V @ 680uA
    Input capacitance (Ciss) at different Vds (maximum value) 1600pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 85nC @ 10V
    Power dissipation (maximum value) 156W(Tc)
    Package/Enclosure TO-220-3
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 800V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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    In Stock :  841

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 50)

    500+ $1.7355 $867.75

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 50 ETD HK 1~2 Weeks
    Min. 500 Mult. 1

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