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Power MOSFET 8-SO

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    MPN IRF7342TRPBF
    Mfr. Infineon
    Oneyac # A3a-IRF7342TRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Dual P-Channel 55 V 0.17 Ohm 38 nC 2 W Generation V SMT Mosfet - SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 38nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 690pF @ 25V
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Rds On(Max)@Id,Vgs 105mΩ@3.4A,10V
    Vgs (th) at different IDs (maximum value) 1V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 38nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 690pF @ 25V
    Pd power dissipation (Max) 2W
    FET type P-Channel
    Drain source voltage Vds 55V
    Continuous drain current Id 3.4A
    Package/Enclosure 8-SO
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    In Stock :  44,000

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 4000)

    4,000+ $0.5583 $2,233.2
    12,000+ $0.3575 $4,290
    20,000+ $0.3544 $7,088

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 4,000 ETD HK 1~2 Weeks
    Min. 4,000 Mult. 1

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