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Power MOSFET IPB200N25N3 G TO-263-3, D ² Pak (2 leads+tab), TO-263AB

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    MPN IPB200N25N3GATMA1
    Other # IPB200N25N3 G
    Mfr. Infineon
    Oneyac # A3a-IPB200N25N3GATMA1-0
    Supplier Oneyac
    Unleaded/RoHs NO
    Description
    Package/Enclosure : TO-263-3, D ² Pak (2 leads+tab), TO-263AB

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 64A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 20 milliohms @ 64A, 10V
    Vgs (th) (maximum value) for different IDs 4V @ 270uA
    Input capacitance (Ciss) at different Vds (maximum value) 7100pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 86nC @ 10V
    Power dissipation (maximum value) 300W(Tc)
    Package/Enclosure TO-263-3, D ² Pak (2 leads+tab), TO-263AB
    working temperature -55°C ~ 175°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 250V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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    In Stock :  6,000

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 1000)

    1,000+ $4.6407 $4,640.7
    3,000+ $4.5555 $13,666.5
    5,000+ $4.4338 $22,169

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 1,000 Mult. 1,000

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    $4.6407 

    Qty. Unit Price
    1000: $4.6407
    3000: $4.5555
    5000: $4.4338
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