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Power MOSFET TO-220AB

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    MPN IRF4104PBF
    Mfr. Infineon
    Oneyac # A3a-IRF4104PBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-220AB Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 100nC @ 10V
    Gate voltage Vgs ±20V
    Input capacitance (Ciss) at different Vds (maximum value) 3000pF @ 25V
    Pd power dissipation (Max) 140W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 10V
    Vgs (th) at different IDs (maximum value) 4V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 100nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3000pF @ 25V
    Rds On(Max)@Id,Vgs 5.5mΩ@75A,10V
    FET type N-Channel
    Drain source voltage Vds 40V
    Continuous drain current Id 120A
    Package/Enclosure TO-220AB
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    In Stock :  2,465

    Qty. Unit Price Ext. Price
    8+ $0.8686 $6.9488

    Full Reel (Order in multiples of 1000)

    1,000+ $0.8199 $819.9

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1,000 ETD HK 1~2 Weeks
    Min. 8 Mult. 1

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