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Power MOSFET IPL60R365P7 4-PowerTSFN

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    MPN IPL60R365P7AUMA1
    Other # IPL60R365P7
    Mfr. Infineon
    Oneyac # A3a-IPL60R365P7AUMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : 4-PowerTSFN

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 10A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 365 milliohms @ 2.7A, 10V
    Vgs (th) (maximum value) for different IDs 4V @ 140uA
    Input capacitance (Ciss) at different Vds (maximum value) 555pF @ 400V
    Gate charge (Qg) at different Vgs (maximum value) 13nC @ 10V
    Power dissipation (maximum value) 46W(Tc)
    Package/Enclosure 4-PowerTSFN
    working temperature -40°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 600V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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    In Stock :  2,800

    Qty. Unit Price Ext. Price
    4+ $1.9257 $7.7028
    10+ $1.9074 $19.074
    25+ $1.8907 $47.2675
    100+ $1.8739 $187.39
    250+ $1.839 $459.75
    500+ $1.8222 $911.1

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 4 Mult. 1

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