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Power MOSFET IPD60R385CP TO-252-3, DPak (2 leads+tab), SC-63

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    MPN IPD60R385CPATMA1
    Other # IPD60R385CP
    Mfr. Infineon
    Oneyac # A3a-IPD60R385CPATMA1
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252-3, DPak (2 leads+tab), SC-63

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Current at 25 ° C - Continuous Drain (Id) 9A(Tc)
    FET type N channels
    Vgs (maximum value) ±20V
    On resistance at different Id and Vgs (maximum value) 385 milliohms @ 5.2A, 10V
    Vgs (th) (maximum value) for different IDs 3.5V @ 340uA
    Input capacitance (Ciss) at different Vds (maximum value) 790pF @ 100V
    Gate charge (Qg) at different Vgs (maximum value) 22nC @ 10V
    Power dissipation (maximum value) 83W(Tc)
    Package/Enclosure TO-252-3, DPak (2 leads+tab), SC-63
    working temperature -55°C ~ 150°C(TJ)
    technology MOSFET (Metal Oxide)
    Leakage source voltage (Vdss) 600V
    Drive voltage (maximum RdsOn, minimum RdsOn) 10V
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    In Stock :  1,288

    Qty. Unit Price Ext. Price
    3+ $2.6466 $7.9398
    10+ $1.9941 $19.941
    25+ $1.9774 $49.435
    100+ $1.8222 $182.22
    250+ $1.696 $424
    500+ $1.5545 $777.25

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 3 Mult. 1

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