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Power MOSFET SOIC-8

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    MPN SI4178DY-T1-GE3
    Mfr. Vishay
    Oneyac # A3a-SI4178DY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8 Series : TrenchFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series TrenchFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.8V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 12nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 405pF @ 15V
    Gate voltage Vgs ±25V
    Pd power dissipation (Max) 2.4W(Ta),5W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    FET type N-Channel
    Drain source voltage Vds 30V
    Continuous drain current Id 12A
    Rds On(Max)@Id,Vgs 17mΩ
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    In Stock :  1,900

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 1)

    20+ $0.4107 $8.214
    25+ $0.4092 $10.23
    100+ $0.321 $32.1
    250+ $0.3179 $79.475
    500+ $0.286 $143
    1,000+ $0.2465 $246.5

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 1 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

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