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Power MOSFET SOT-223

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    MPN IRLL024NTRPBF
    Mfr. Infineon
    Oneyac # A3a-IRLL024NTRPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOT-223 Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 15.6nC @ 5V
    Gate voltage Vgs ±16V
    Input capacitance (Ciss) at different Vds (maximum value) 510pF @ 25V
    Pd power dissipation (Max) 1W(Ta)
    working temperature -55°C~150°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4V,10V
    Vgs (th) at different IDs (maximum value) 2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 15.6nC @ 5V
    Input capacitance (Ciss) at different Vds (maximum value) 510pF @ 25V
    Rds On(Max)@Id,Vgs 65mΩ@3.1A,10V
    FET type N-Channel
    Drain source voltage Vds 55V
    Continuous drain current Id 4.4A
    Package/Enclosure SOT-223
    Voltage, coupled to gate charge (Qg) (maximum) @ Vgs 5V
    Voltage, coupled to input capacitor (Ciss) (maximum) @ Vds 25V
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    In Stock :  80,000

    Qty. Unit Price Ext. Price

    Full Reel (Order in multiples of 2500)

    2,500+ $0.3058 $764.5

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    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 2,500 Mult. 2,500

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