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Power MOSFET HSMT

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    MPN RQ3E120ATTB
    Mfr. ROHM Semiconductor
    Authorized Distributor
    Oneyac # A33-RQ3E120ATTB-0
    Supplier Oneyac
    Product Cycle

    Production

    Unleaded/RoHs YES
    Description
    Package/Enclosure : HSMT

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series RQ
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 1mA
    Gate charge (Qg) at different Vgs (maximum value) 62nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 3200pF @ 15V
    working temperature 150°C(TJ)
    Package/Enclosure HSMT
    Continuous drain current Id 12A
    Pd power dissipation (Max) 2W
    QG gate charge 62nC
    Rds On(Max)@Id,Vgs 8mΩ@-12A,-10V
    Drain source voltage Vds 39V
    Gate voltage Vgs ±20V
    rise time 30ns
    Descent time 95ns
    Typical shutdown delay time 140ns
    Typical connection delay time 20ns
    width 2.4mm
    FET type P-Channel
    Number of channels 1Channel
    to configure Single
    length 3mm
    height 0.85mm
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    In Stock :  24,000

    Qty. Unit Price Ext. Price
    60+ $0.4135 $24.81
    100+ $0.3684 $36.84
    500+ $0.3684 $184.2
    1,000+ $0.3671 $367.1
    2,000+ $0.3658 $731.6

    Full Reel (Order in multiples of 3000)

    4,000+ $0.3631 $1,452.4

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 3,000 ETD HK 1~2 Weeks
    Min. 60 Mult. 1

    Special Note

    Production Year: 2023

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