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Power MOSFET SOIC-8

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    MPN SI4056DY-T1-GE3
    Mfr. Vishay
    Oneyac # A33-SI4056DY-T1-GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : SOIC-8

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series SI
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.8V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 29.5nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 900pF @ 50V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 2.5W(Ta),5.7W(Tc)
    working temperature -55°C~150°C(TJ)
    Package/Enclosure SOIC-8
    FET type N-Channel
    Continuous drain current Id 11.1A
    Rds On(Max)@Id,Vgs 23mΩ
    Drain source voltage Vds 2.8V
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    In Stock :  2,500

    Qty. Unit Price Ext. Price
    30+ $0.9077 $27.231
    50+ $0.6891 $34.455
    100+ $0.6175 $61.75
    500+ $0.5685 $284.25
    1,000+ $0.5592 $559.2
    2,000+ $0.5513 $1,102.6

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 30 Mult. 1

    Special Note

    Production Year: 2024

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