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Power MOSFET D2PAK

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    MPN IRLS3036TRLPBF
    Mfr. Infineon
    Oneyac # A3-IRLS3036TRLPBF
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : D2PAK Series : HEXFET®

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 140nC @ 4.5V
    Gate voltage Vgs ±16V
    Input capacitance (Ciss) at different Vds (maximum value) 11210pF @ 50V
    Pd power dissipation (Max) 380W(Tc)
    working temperature -55°C~175°C(TJ)
    Series HEXFET®
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 140nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 11210pF @ 50V
    Rds On(Max)@Id,Vgs 2.4mΩ@165A,10V
    FET type N-Channel
    Drain source voltage Vds 60V
    Continuous drain current Id 270A
    Package/Enclosure D2PAK
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    In Stock :  3,200

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