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Power MOSFET TO-252

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    MPN SQD50N10-8M9L_GE3
    Mfr. Vishay
    Oneyac # A3-SQD50N10-8M9L_GE3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : TO-252

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Series SQD
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2.5V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 70nC @ 10V
    Input capacitance (Ciss) at different Vds (maximum value) 2950pF @ 25V
    Gate voltage Vgs ±20V
    Pd power dissipation (Max) 136W(Tc)
    working temperature -55°C~175°C(TJ)
    Package/Enclosure TO-252
    FET type N-Channel
    Continuous drain current Id 50A
    Rds On(Max)@Id,Vgs 8.99mΩ
    Drain source voltage Vds 2V
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    In Stock :  6,000 Lead Time:28W

    Qty. Unit Price Ext. Price
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    When unpacking without original label and tray!
    MPQ 2,000 ETD HK 5~17 Working Days
    Min. 1 Mult. 1

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