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Power Mosfet 

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    MPN NTR4101PT1G
    Mfr. ON Semiconductor
    Oneyac # A-NTR4101PT1G-3
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

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    Datasheet

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    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Drive voltage @ Rds On (Max), Rds On (Min) 1.8V,4.5V
    Vgs (th) at different IDs (maximum value) 1.2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 8.5nC @ 4.5V
    Input capacitance (Ciss) at different Vds (maximum value) 675pF @ 10V
    Gate voltage Vgs ±8V
    Pd power dissipation (Max) 420mW(Ta)
    Rds On(Max)@Id,Vgs 85m Ohms@1.6A,4.5V
    working temperature -55°C~150°C(TJ)
    Encapsulation/shell SOT-23
    FET type P-Channel
    Drain source voltage Vds 20V
    Continuous drain current Id 3.2A
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