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Power Mosfet IPD068N10N3GATMA1 DPAK (TO-252)

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    MPN IPD068N10N3 G
    Other # IPD068N10N3GATMA1
    Mfr. Infineon
    Oneyac # A33-IPD068N10N3 G
    Supplier Oneyac
    Unleaded/RoHs YES
    Description
    Package/Enclosure : DPAK (TO-252)

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Number of channels 1Channel
    Qg-gate charge 68nC
    Configuration Single
    Pd-power dissipation (Max) 150W
    height 2.3mm
    length 6.5mm
    width 6.22mm
    Forward Transconductance-Minimum 54S
    Fall time 9ns
    Rise Time 37ns
    Typical off delay time 37ns
    Typical on-delay time 19ns
    Moisture Level 1 Ohms
    Rds On(Max)@Id,Vgs 6.8mΩ
    Drain-source voltage Vds 100V
    Continuous Drain Current Id 90A
    QG (typ @10V) 51.0 nC
    Package/Enclosure DPAK (TO-252)
    Rth 1.0 K/W
    Budgetary Price €/1k 0.65
    Ptot max 150.0W
    fet type N-Channel
    Coss 646.0 pF
    Ciss 3690.0 pF
    Gate voltage Vgs 2.7V,2V,3.5V
    Operating temperature -55°C~175°C
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    In Stock :  4,999

    Qty. Unit Price Ext. Price
    20+ $1.5744 $31.488
    50+ $1.5265 $76.325
    100+ $1.4503 $145.03
    500+ $1.438 $719
    1,000+ $1.4134 $1,413.4

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 2,500 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Year: 2022