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Power MOSFET BSC010NE2LSIATMA1

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    MPN BSC010NE2LSI
    Other # BSC010NE2LSIATMA1
    Mfr. Infineon
    Oneyac # A33-BSC010NE2LSI-0
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power MOSFET
    Input capacitance (Ciss) at different Vds (maximum value) 4200pF @ 12V
    Drain source voltage Vds 25V
    Drive voltage @ Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) at different IDs (maximum value) 2V @ 250µA
    Gate charge (Qg) at different Vgs (maximum value) 59nC @ 10V
    Number of channels 1Channel
    Continuous drain current Id 100A
    Rds On(Max)@Id,Vgs 1.05mΩ
    Gate voltage Vgs 10V
    QG gate charge 59nC
    to configure SingleQuadDrainTripleSource
    Pd power dissipation (Max) 96W
    height 1.27mm
    length 5.9mm
    FET type N-Channel
    width 5.15mm
    Forward transconductance - minimum value 80S
    Descent time 4.6ns
    rise time 6.2ns
    Typical shutdown delay time 32ns
    Typical connection delay time 6.3ns
    working temperature -55°C~150°C
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    In Stock :  5,000

    Qty. Unit Price Ext. Price
    20+ $1.3516 $27.032
    50+ $1.2986 $64.93
    100+ $1.2588 $125.88
    500+ $1.2456 $622.8
    1,000+ $1.2323 $1,232.3
    2,000+ $1.2191 $2,438.2
    4,000+ $1.2191 $4,876.4

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 5,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Year: 2023