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Power Mosfet BSC010NE2LSIATMA1

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    MPN BSC010NE2LSI
    Other # BSC010NE2LSIATMA1
    Mfr. Infineon
    Oneyac # A33-BSC010NE2LSI-0
    Supplier Oneyac
    Unleaded/RoHs YES
    Description

    Specifications FAQ

    Description Details Operation
    Product Category Power Mosfet
    Input capacitance (Ciss) at different Vds (maximum) 4200pF @ 12V
    Drain-source voltage Vds 25V
    Drive voltage @Rds On (Max), Rds On (Min) 4.5V,10V
    Vgs (th) (maximum) at different Ids 2V @ 250µA
    Gate Charge (Qg) at Different Vgs (Maximum) 59nC @ 10V
    Number of channels 1Channel
    Continuous Drain Current Id 100A
    Rds On(Max)@Id,Vgs 1.05mΩ
    Gate voltage Vgs 10V
    Qg-gate charge 59nC
    Configuration SingleQuadDrainTripleSource
    Pd-power dissipation (Max) 96W
    height 1.27mm
    length 5.9mm
    fet type N-Channel
    width 5.15mm
    Forward Transconductance-Minimum 80S
    Fall time 4.6ns
    Rise Time 6.2ns
    Typical off delay time 32ns
    Typical on-delay time 6.3ns
    Operating temperature -55°C~150°C
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    In Stock :  5,000

    Qty. Unit Price Ext. Price
    20+ $1.2536 $25.072
    50+ $1.2045 $60.225
    100+ $1.1676 $116.76
    500+ $1.1553 $577.65
    1,000+ $1.143 $1,143
    2,000+ $1.1307 $2,261.4
    4,000+ $1.1307 $4,522.8

    Unit Price:$

    Ext. Price:$

    When unpacking without original label and tray!
    MPQ 5,000 ETD HK 1~2 Weeks
    Min. 20 Mult. 1

    Special Note

    Production Year: 2023